Lead frames for trench drams
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United States of America Patent
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-
Dec 1, 1998
Grant Date -
N/A
app pub date -
Jan 24, 1996
filing date -
Jan 24, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A DIP integrated circuit package is disclosed which includes a trench-type DRAM and an associated non-symmetric lead frame having one or more Y-shaped leads which branch in the direction of die I/O pads. Such non-symmetric lead frames allow multiple use of pin spacing (i.e., one pin may be used to connect to widely spaced I/O pads on the DRAM die). Further, such structures serve to dissipate the generated heat, and thereby reduce noise, in high density trench-type DRAMs, such as 64 Mbit DRAMs. The lead frame is provided as a DIP lead frame which has no die attach pad and is wire bonded to I/O pads of the integrated circuit that are provided along a center line on the chip.
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