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Abstract

In a micro-patterned semiconductor device that uses thin-film polycrystalline silicon for both interconnection and TFT (Thin Film Transistor) configuration elements, the required current supply capacity is achieved by increasing the leakage current of a reverse-direction diode when the reverse-direction junction diode is present in the current path consisting of polycrystalline silicon. Leakage current is increased by steepening the density slope at the PN junction of the diode which consists of polycrystalline silicon, or by making the region near the junction amorphous. For example, sufficient current can be supplied to a large number of memory cells via reverse-direction diodes even when cells that use TFTs consisting of thin-film polycrystalline silicon as the load for the flip-flop are used as large-scale SRAM memory cells. In this way, ultra high-integration memory ICs can be realized.

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First Claim