Process for formation of epitaxial film
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United States of America Patent
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Dec 15, 1998
Issued Date -
N/A
app pub date -
Jun 6, 1995
filing date -
Dec 15, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for forming an epitaxial film on a biased substrate by sputtering a target to which a bias voltage and a plasma-generating high-frequency power are applied, wherein the film formation is carried out in an atmosphere having H.sub.2 O, CO and CO.sub.2 partial pressures controlled at 1.0.times.10.sup.-8 Torr, with the substrate temperature maintained in the range of from 400.degree. to 700.degree. C. The epitaxial film obtained by the process has excellent interface characteristics, very low impurity contents, good crystallinity and excellent step coverage, and is suitable for application to semiconductor devices.
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