Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
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United States of America Patent
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Dec 22, 1998
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Aug 26, 1996
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Dec 9, 1993
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Abstract
A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.
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