Method for etching transistor gates using a hardmask
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United States of America Patent
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Dec 22, 1998
Grant Date -
N/A
app pub date -
Oct 1, 1996
filing date -
Oct 1, 1996
priority date (Note) -
Expired
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Abstract
An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.
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