High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate

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United States of America Patent

PATENT NO 5852576
SERIAL NO

08944904

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Abstract

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Two NMOS boost transistors have their sources connected to the high voltage input while their drains and gates are cross-connected. Two coupling capacitors connect two alternate phase clocks to the gates of the two cross-connected boost transistors. An NMOS pass transistor has its gate connected to the drain of one of the NMOS boost transistors, its source connected to the high voltage input, and its drain connected to the output. In an embodiment, two diode-connected regulation transistors connect the gates of the boost transistors to the high voltage input. These connections insure that the gates of the boost transistors and the gate of the pass transistor never reach voltages higher than one threshold voltage above the high voltage input. In another embodiment, two discharge transistors have their drains connected to a decode input, their sources connected to the gates of the boost transistors, and their gates connected to the positive power supply. By setting the decode input at zero volts, the voltages at the gates of the boost transistors and of the pass transistor are held at zero volts, thus disabling them. In the preferred embodiment, both the regulation transistors and the discharge transistors are included in the high voltage pass gate.

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Patent Owner(s)

Patent OwnerAddress
MORGAN STANLEY SENIOR FUNDING INC1300 THAMES STREET 4TH FLOOR BALTIMORE MD 21231

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Pau-Ling Saratoga, CA 73 2348
Chung, Michael Shingche San Jose, CA 1 16
Hollmer, Shane Charles San Jose, CA 34 536
Kawamura, Shoichi Sunnyvale, CA 29 694
Le, Binh Quang Mountain View, CA 40 1018
Leung, Vincent C Mountain View, CA 3 19
Yano, Masaru Sunnyvale, CA 99 1443

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