Method of manufacturing a semiconductor device
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United States of America Patent
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Dec 29, 1998
Issued Date -
N/A
app pub date -
May 15, 1995
filing date -
Sep 9, 1989
priority date (Note) -
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Abstract
A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.
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