Substrate holder and reaction apparatus

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United States of America Patent

PATENT NO 5858100
SERIAL NO

08416006

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR PROCESS LABORATORY CO LTD13-29 KONAN 2-CHOME MINATO-KU TOKYO 108-0075
CANON SALES CO INC7-2 NAKASE 1-CHOME MIHAMA-KU CHIBA-SHI CHIBA 261-8
ALCAN-TECH CO INC13-29 KONAN 2-CHOME MINATO-KU TOKYO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maeda, Kazuo Tokyo, JP 139 3781
Nishimoto, Yuhko Tokyo, JP 11 1479
Ohira, Kouichi Tokyo, JP 24 545

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