Process for forming improved titanium-containing barrier layers
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United States of America Patent
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Jan 12, 1999
Grant Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Jun 7, 1995
priority date (Note) -
Expired
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Abstract
An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.
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