Photo masks for developing planar layers in a semiconductor device, and methods of forming the same
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United States of America Patent
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Jan 12, 1999
Grant Date -
N/A
app pub date -
Jun 18, 1996
filing date -
Jul 4, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The semiconductor masking device of the invention includes a first semiconductor mask for forming an interconnection on a semiconductor substrate and a second semiconductor mask for forming a resist pattern on an insulating film. The first semiconductor mask has three masking areas and the second semiconductor mask has two masking areas. Masking area intervals, that is, the distances between the three masking areas of the first semiconductor mask and the two masking areas of the second semiconductor mask, are all equal to one another.
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