Method of forming a polycide film
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United States of America Patent
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Jan 19, 1999
Grant Date -
N/A
app pub date -
Feb 15, 1996
filing date -
Feb 15, 1996
priority date (Note) -
Expired
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Abstract
A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.
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