In-situ pre-PECVD oxide deposition process for treating SOG
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United States of America Patent
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Jan 19, 1999
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app pub date -
Sep 8, 1997
filing date -
May 1, 1995
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Abstract
An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of: (1) forming an SOG layer on an uneven semiconductor surface, (2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and (3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber. The operating parameters for performing the in situ treatment are as follows:
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