Field effect devices and capacitors with improved thin film dielectrics and method for making same
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United States of America Patent
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Jan 19, 1999
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N/A
app pub date -
Feb 28, 1997
filing date -
Feb 28, 1997
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Abstract
In accordance with the invention an electronic device is provided with a thin film dielectric layer of enhanced reliability. The dielectric comprises a thin film of silicon oxide having maximum concentrations of nitrogen near its major interfaces. In a field effect device, the maximum adjacent the gate enhances resistance to penetration of dopants from the gate. The secondary maximum near the channel enhances resistance to current stress. The maximum near the channel is preferably displaced slightly inward from the channel to minimize effects on carrier mobility.
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