Device for protection after a page-write operation in an electrically programmable memory
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United States of America Patent
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Jan 19, 1999
Grant Date -
N/A
app pub date -
Nov 14, 1997
filing date -
Nov 28, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in order to write a page previously stored in buffers, and the circuit addresses the writing of a protection bit after the writing of the page.
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