Method for anisotropically etching tungsten using SF.sub.6, CHF.sub.3, and N.sub.2
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United States of America Patent
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Feb 2, 1999
Grant Date -
N/A
app pub date -
Apr 4, 1997
filing date -
Apr 4, 1997
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Abstract
A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.
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