High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 2, 1999
Grant Date -
N/A
app pub date -
Nov 19, 1997
filing date -
Nov 19, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive shield or insulating material with a low dielectric constant between adjacent floating gates, and/or by compensating for the coupling when reading the states of the cells.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully