Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps
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United States of America Patent
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Feb 23, 1999
Grant Date -
N/A
app pub date -
Aug 6, 1997
filing date -
Aug 8, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction chambers, a group of gate valves connected to the high-vacuum pumps, and a low-vacuum pump connected to the gate valves. There are fewer gate valves than high-vacuum pumps. A method for fabricating a semiconductor device using the above apparatus includes the sequence and duration of opening gate valves, injecting reaction gases, and pumping with the low vacuum pump. According to the present invention, since the number of pumps is reduced, the cost for installation, operation and maintenance of the semiconductor device fabrication apparatus is reduced.
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