Method for removing etch residue material
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United States of America Patent
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Feb 23, 1999
Issued Date -
N/A
app pub date -
Jun 24, 1997
filing date -
Jun 7, 1994
priority date (Note) -
Expired
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Abstract
A method for removing etch residue material in which the removing process is simple, and the metal is prevented from being corroded or damaged. The method for removing etch residue materials and photoresist after carrying out a dry etching includes the steps of preparing a dry chemical by using one or more gas compounds, and removing the etch residue materials by raising the dry chemical above a critical point, wherein the dry chemical comprises carbon dioxide gas and one or more gases selected from a group consisting of DMSO (dimethyl sulfoxide), DMFA (dimethyl formamide), and THF (phentydrone).
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