Polycide etching with HCL and chlorine
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United States of America Patent
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Feb 23, 1999
Grant Date -
N/A
app pub date -
May 13, 1996
filing date -
May 13, 1996
priority date (Note) -
Expired
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Abstract
Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl.sub.2 at a volumetric flowrate ratio of HCl:Cl.sub.2 within the range of 3:1 to 5:1.
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