Method for forming vias in a dielectric film
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United States of America Patent
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Feb 23, 1999
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N/A
app pub date -
Dec 5, 1996
filing date -
Dec 5, 1996
priority date (Note) -
Expired
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Abstract
Vias are formed in a dielectric film overlying an electrode layer by sweeping a laser beam over the area in which the via is to be formed. In particular, a Nd:YAG laser, producing a beam of light having a 266 nm wave length, effectively ablates a barium strontium titanate dielectric film, without adversely affecting an underlying platinum electrode. The present invention overcomes the problem of wet chemical etching of dielectric films to form vias. Wet chemical etching often requires etchants that adversely affect the underlying metal electrode and typically require the use of environmentally undesirable chemicals.
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