Dielectric thin film and fabrication method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5874379
SERIAL NO

08610282

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An improved dielectric thin film and a capacitor with the same for a semiconductor and a fabrication method thereof capable of preventing leakage current in operation, which dielectric thin film includes (Ba, Sr)TiO.sub.3 containing Ta, and which the capacitor includes a substrate; an interlayer insulation layer formed on a substrate, thereby exposing a predetermined portion of the substrate to the outside; a lower electrode formed on a predetermined portion of the interlayer insulation layer including the exposed portion of the substrate; a dielectric thin film consisting of (Ba, Sr)TiO.sub.3 containing Ta and formed on the interlayer insulation film including the lower electrode; and an upper electrode formed on the dielectric thin film.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
LG Semicon Co., Ltd.CHUNGCHEONGBUK-DO592

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Joo, Jae-Hyun Kyungki-Do, KR 23 162
Joo, Seung-Ki Seoul, KR 11 72

Cited Art Landscape

Patent Info (Count) # Cites Year
 
PERMELEC ELECTRODE LTD. (1)
* 5441670 Process for producing an electrically conductive mixed oxide of titanium and tantalum or niobium 5 1993
 
L-3 COMMUNICATIONS CORPORATION (1)
* 5314651 Fine-grain pyroelectric detector material and method 23 1992
 
E. I. DU PONT DE NEMOURS AND COMPANY (1)
* 5086021 Dielectric composition 20 1990
 
Nippon Oil & Fats Co. Ltd. (1)
* 4987107 Ceramic composition for reduction-reoxidation type semiconductive capacitor 24 1989
 
DMC2 ELECTRONIC MATERIALS B.V. (1)
* 4957888 Method of manufacturing ceramic powders having the perovskite structure 9 1988
 
TDK CORPORATION (1)
* 4642732 Dielectric ceramic composition and method of producing same, and a monolithic capacitor 11 1986
 
TAIYO YUDEN CO., LTD. (1)
* 5051864 Solid dielectric capacitor and method of manufacture 2 1990
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
JOHNSON RESEARCH & DEVELOPMENT COMPANY, INC. (1)
* 6582481 Method of producing lithium base cathodes 28 1999
 
Other [Check patent profile for assignment information] (1)
* 2004/0077,168 Etchant and method for fabricating a semiconductor device using the same 0 2003
 
NATIONAL APPLIED RESEARCH LABORATORIES (1)
* 7413912 Microsensor with ferroelectric material and method for fabricating the same 3 2005
 
SIEMENS AKTIENGESELLSCHAFT (1)
* 6440210 Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure 5 2001
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
MICRON TECHNOLOGY, INC. (22)
* 7253122 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 78 2002
7087481 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 79 2002
6984592 Systems and methods for forming metal-doped alumina 83 2002
* 2004/0043,625 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 23 2002
* 2004/0043,635 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 33 2002
* 2005/0221,006 Metal-doped alumina and layers thereof 75 2005
* 7648926 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 3 2006
* 2006/0252,279 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 78 2006
7439195 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 10 2006
* 2006/0258,175 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 23 2006
* 7576378 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 4 2007
* 2007/0295,273 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 75 2007
7666801 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 2 2008
* 2009/0042,406 SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS 4 2008
7683001 Dielectric layers and memory cells including metal-doped alumina 2 2008
* 2009/0109,731 DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA 2 2008
8034728 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines 0 2009
* 2010/0099,272 SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL DIKETONATES AND/OR KETOIMINES 2 2009
7902099 Dielectric layers and memory cells including metal-doped alumina 0 2010
* 2010/0171,089 DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA 0 2010
8653573 Dielectric layers and memory cells including metal-doped alumina 1 2011
* 2011/0121,376 Dielectric Layers and Memory Cells Including Metal-Doped Alumina 0 2011
 
The United States of America as represented by the United States Department of Energy (2)
6660414 Tungsten-doped thin film materials 2 1999
* 6146907 Method of forming a dielectric thin film having low loss composition of Ba.sub.x Sr.sub.y Ca.sub.1-x-y TiO.sub.3 : Ba.sub.0.12-0.25 Sr.sub.0.35-0.47 Ca.sub.0.32-0.53 TiO.sub.3 23 1999
 
Deposition Sciences, Inc. (1)
* 2005/0092,599 Apparatus and process for high rate deposition of rutile titanium dioxide 1 2004
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (2)
* 7053019 Dielectric material compositions with high dielectric constant and low dielectric loss 0 2003
* 2004/0089,853 Dielectric material compositions with high dielectric constant and low dielectric loss 0 2003
* Cited By Examiner