Dielectric thin film and fabrication method thereof

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United States of America Patent

PATENT NO 5874379
SERIAL NO

08610282

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An improved dielectric thin film and a capacitor with the same for a semiconductor and a fabrication method thereof capable of preventing leakage current in operation, which dielectric thin film includes (Ba, Sr)TiO.sub.3 containing Ta, and which the capacitor includes a substrate; an interlayer insulation layer formed on a substrate, thereby exposing a predetermined portion of the substrate to the outside; a lower electrode formed on a predetermined portion of the interlayer insulation layer including the exposed portion of the substrate; a dielectric thin film consisting of (Ba, Sr)TiO.sub.3 containing Ta and formed on the interlayer insulation film including the lower electrode; and an upper electrode formed on the dielectric thin film.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
LG SEMICON CO., LTD.CHUNGCHEONGBUK-DO592

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Joo, Jae-Hyun Kyungki-Do, KR 23 164
Joo, Seung-Ki Seoul, KR 11 74

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