Modular MOSFETS for high aspect ratio applications
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United States of America Patent
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Feb 23, 1999
Issued Date -
N/A
app pub date -
Jul 24, 1996
filing date -
Apr 27, 1995
priority date (Note) -
Expired
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Abstract
An improved design for high aspect ratio MOS devices is capable of 100% yields. The design is suitable for low voltage CMOS devices, such as microprocessors, which use the high aspect ratio MOS devices in embedded applications, and for HEMTs in high frequency applications, such as high power microwave devices. The high yields reduce manufacturing costs. A modular MOS concept is introduced to realize the 100% yield of large channel width devices. The structure of the modular MOS device is a regular MOS device with a unit device channel width. This can be a multi-finger device which has a proper dimension to be able to fit in a given layout area. Therefore, the number of modules which are needed to form a full large width device is not only determined by module size, but also on the manufacturing yield record, allowed chip real estate and performance requirement.
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