Crystal growth
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United States of America Patent
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-
Mar 9, 1999
Grant Date -
N/A
app pub date -
Dec 20, 1996
filing date -
Jun 23, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Homogeneous crystals are grown from a multicomponent melt double crucible assembly with an injector which affords improved flow of melt from the outer to the inner crucible. Guide rods are provided external to the outer crucible and locate the inner crucible with reduced probability of sticking. Means are also provided for withdrawing the inner crucible after crystal growth is complete as is a method of removing trapped gas from the apparatus prior to crystal growth.
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