Method of heteroepitaxial growth of beta silicon carbide on silicon
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United States of America Patent
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Mar 9, 1999
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Aug 13, 1997
filing date -
Aug 13, 1997
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Abstract
A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.
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