Self-aligned contact window
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United States of America Patent
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Mar 9, 1999
Grant Date -
N/A
app pub date -
Dec 30, 1991
filing date -
Dec 30, 1991
priority date (Note) -
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Abstract
A self aligned contact to the substrate in the region between two gate electrodes is formed by depositing a conformal dielectric layer and patterning to form a contact window. The conductive elements of the gate electrode are not contacted because of etch rate differentials between the conformal dielectric and the insulating elements of the gate structure.
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