Process for formation of wiring layer in semiconductor device
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United States of America Patent
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Mar 9, 1999
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N/A
app pub date -
Jan 5, 1996
filing date -
Jan 6, 1995
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Abstract
A method for formation of a wiring layer in a semiconductor device, which includes the steps of: forming a first conductive layer upon a substrate; forming a second conductive layer on the first conductive layer, the second conductive layer having a melting point lower than that of the first conductive layer; and melting (or flowing) the second conductive layer. The first conductive layer is composed of aluminum or an aluminum alloy, and the impurity may be Si or Cu, while the second conductive layer has a melting point lower than that of the first conductive layer by 10.degree. C. or more.
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