Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
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United States of America Patent
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Mar 16, 1999
Grant Date -
N/A
app pub date -
Apr 26, 1996
filing date -
Apr 26, 1996
priority date (Note) -
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Abstract
A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.
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