High-permittivity thin film capacitor for a semiconductor integrated circuit and a fabrication method thereof

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United States of America Patent

PATENT NO 5882946
SERIAL NO

08429169

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Abstract

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A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300.degree. C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250.degree. C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4.times.10.sup.-7 A/cm.sup.2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
FUJITSU LIMITEDKAWASAKI18047

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otani, Seigen Kawasaki, JP 8 77

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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