Method of preparing a semiconductor having a controlled crystal orientation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 16, 1999
Issued Date -
N/A
app pub date -
Aug 15, 1997
filing date -
Jun 25, 1993
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully