Method for making a semiconductor device using a flowable oxide film
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United States of America Patent
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-
Mar 16, 1999
Grant Date -
N/A
app pub date -
Dec 12, 1997
filing date -
Dec 12, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming an opening in a first film is provided, wherein the opening has first and second opening portions and the first film is an insulating film. The first opening portion is formed in the first film and a second film is formed on an upper surface of the first film and to fill in the first opening portion. A masking film is formed on the second film. The first film and the second film are etched by a first etching process using the masking film as a mask to form the second opening portion. The first film and the second film are etched at substantially the same rate by the first etching process. The remaining portion of the second film in the first opening portion is etched by a second etching process. The second film is etched at a higher rate than the first film by the second etching process.
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