Highly-integrated thin film capacitor with high dielectric constant layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5883781
SERIAL NO

08635872

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11993

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lesaicherre, Pierre Yves Tokyo, JP 2 32
Yamamichi, Shintaro Tokyo, JP 89 1091

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (2)
* 5335138 High dielectric constant capacitor and method of manufacture 255 1993
* 5464786 Method for forming a capacitor having recessed lateral reaction barrier layer edges 45 1994
 
RENESAS ELECTRONICS CORPORATION (2)
* 5466964 Semiconductor device capable of increasing reliability 9 1993
* 5418388 Semiconductor device having a capacitor with an adhesion layer 58 1994
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
* 5382817 Semiconductor device having a ferroelectric capacitor with a planarized lower electrode 65 1993
* 5567964 Semiconductor device 47 1995
 
Radiant Technologies, Inc. (1)
* 5541807 Ferroelectric based capacitor for use in memory systems and method for fabricating the same 18 1995
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
QIMONDA AG (1)
7045070 Method of producing an electrode configuration and method of electrically contacting the electrode configuration 4 2000
 
AVX CORPORATION (2)
6898070 Transmission line capacitor 8 2003
* 2004/0136,141 Transmission line capacitor 0 2003
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
RENESAS ELECTRONICS CORPORATION (3)
* 6432835 Process for fabricating an integrated circuit device having a capacitor with an electrode formed at a high aspect ratio 9 1999
* 7264677 Process for treating solid surface and substrate surface 2 2005
* 2006/0037,627 Process for treating solid surface and substrate surface 0 2005
 
SAMSUNG ELECTRONICS CO., LTD. (2)
* 6084765 Integrated circuit capacitors having recessed oxidation barrier spacers 9 1998
6261849 Method of forming integrated circuit capacitors having recessed oxidation barrier spacers and method of forming same 16 2000
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
* 6187622 Semiconductor memory device and method for producing the same 7 1998
* 6407419 Semiconductor device and manufacturing method thereof 6 1999
 
TEXAS INSTRUMENTS INCORPORATED (2)
* 6898068 Dual mask capacitor for integrated circuits 4 2003
* 2005/0063,139 DUAL MASK CAPACITOR FOR INTEGRATED CIRCUITS 1 2003
 
KABUSHIKI KAISHA TOSHIBA (1)
* 6326316 Method of manufacturing semiconductor devices 13 2000
 
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
* 6654226 Thermal low k dielectrics 0 2002
* Cited By Examiner