Method and apparatus for reading/writing data in a memory system including programmable resistors

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United States of America Patent

PATENT NO 5883827
SERIAL NO

08704953

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Abstract

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The present invention relates to circuitry and a related method to reliably write data to an array of programmable resistance elements by selectively applying pulses of a sufficient level to impart either a first (high) or second (low) resistance state to selected programmable resistance elements to store either a binary '1' or '0', respectively. Data is then read from the array by supplying currents though the selected programmable resistance element and a fixed resistive element. A comparison of the resulting voltages on nodes coupled to these resistive elements will indicate whether the resistance value of the programmable resistance element is at a high or low state, i.e., a binary '1' or '0'. Further, a shunt circuit is coupled to the selected column lines of the array to protect the programmable resistance elements from excessive spurious or noise currents, which can erroneously program the programmable resistance elements.

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Patent Owner(s)

Patent OwnerAddress
ROUND ROCK RESEARCH LLC26 DEER CREEK LANE MT KISCO NY 10549

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morgan, Donald M Boise, ID 118 2647

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