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Abstract

A thermoelectric material having excellent thermoelectric performance is shown and described. A thermoelectric material is formed having a plurality of conductive layers and a plurality of barrier layers that are alternatingly formed one upon the other such that one conductive layer is sandwiched by two barrier layers. The conductive layers are composed of a first semiconductor only, and the two barrier layers located on the outermost sides of the material each have a main layer made of a second semiconductor only and a boundary layer made of the first and second semiconductors. A plurality of barrier layers positioned in between the conductive layers each have a main layer and two boundary layers provided on opposite sides of the main layer. The thickness t.sub.1 of the conductive layer and the thickness t.sub.2 of the barrier layer have a relationship of 2t.sub.1 .ltoreq.t.sub.2 .ltoreq.50t.sub.1.

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First Claim