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Abstract

On determining operating conditions for a nonvolatile semiconductor memory including a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), measurement is made, before completion of manufacture of the nonvolatile semiconductor memory and after completion of manufacture of the MOSFET, of characteristics of the MOSFET to obtain parameters which are used in simulating an operation of the nonvolatile semiconductor memory. By using the parameters, simulation of the operation of the nonvolatile semiconductor memory is executed to obtain a simulation result which is preferably a result relating to deterioration of operation characteristics of the nonvolatile semiconductor memory. The operating conditions for the nonvolatile semiconductor memory are obtained from the simulation result. The nonvolatile semiconductor memory may be an EEPROM (Electrically Erasable Programmable Read-Only Memory).

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