Thin film capacitor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5889299
SERIAL NO

08804394

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Abstract

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A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant 'c' in the direction thicknesswise of the film and a lattice constant 'a' in the direction parallel with a plane of the film.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
KABUSHIKI KAISHA TOSHIBATOKYO20986

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Kazuhide Kawasaki, JP 94 1238
Fukushima, Noburu Tokyo, JP 20 387
Izuha, Mitsuaki Chiba, JP 8 92
Kawakubo, Takashi Yokohama, JP 81 1439
Komatsu, Shuichi Yokohama, JP 19 389
Sano, Kenya Kawasaki, JP 35 446

Cited Art Landscape

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (3)
* 5760432 Thin film strained layer ferroelectric capacitors 25 1995
* 5691219 Method of manufacturing a semiconductor memory device 42 1995
* 5739563 Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same 73 1995
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
VISHAY INTERTECHNOLOGY, INC. (6)
* 6621142 Precision high-frequency capacitor formed on semiconductor substrate 6 2002
* 6621143 Precision high-frequency capacitor on semiconductor substrate 4 2002
8004063 Precision high-frequency capacitor formed on semiconductor substrate 1 2006
* 2010/0295,152 Precision high-frequency capacitor formed on semiconductor substrate 0 2006
8324711 Precision high-frequency capacitor formed on semiconductor substrate 2 2011
* 2011/0176,247 PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 0 2011
 
Other [Check patent profile for assignment information] (2)
* 6025618 Two-parts ferroelectric RAM 51 1996
* 2006/0189,003 Temperature-compensated ferroelectric capacitor device, and its fabrication 1 2005
 
SEIKO EPSON CORPORATION (2)
* 6930339 Ferroelectric memory and electronic apparatus 3 2002
* 6737690 Ferroelectronic memory and electronic apparatus 3 2002
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 6455326 Enhanced process capability for sputtered ferroelectric films using low frequency pulsed DC and RF power supplies 1 2000
 
IBIDEN CO., LTD. (2)
* 7742277 Dielectric film capacitor and method of manufacturing the same 7 2006
* 2007/0126,041 Dielectric film capacitor and method of manufacturing the same 7 2006
 
MICRON TECHNOLOGY, INC. (5)
* 6855971 Haze-free BST films 1 2001
6660535 Method of forming haze- free BST films 4 2001
6939723 Method of forming haze-free BST films 0 2003
6924968 Haze-free BST films 0 2003
6852593 Haze-free BST films 1 2003
 
Waseda University and Riken (1)
* 2002/0150,929 Detecting reagent for double-stranded nucleic acid and double-stranded nucleic acid detecting method 0 2001
 
MURATA MANUFACTURING CO., LTD. (2)
7378050 Method of producing translucent ceramic 1 2004
* 2005/0104,265 Translucent ceramic, method of producing the same and optical devices 0 2004
 
FUJITSU LIMITED (2)
* 6974985 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same 11 2001
* 6975501 Electronic device and method of applying voltage to capacitor 2 2004
 
WISCONSIN ALUMNI RESEARCH FOUNDATION (1)
7449738 Strain-engineered ferroelectric thin films 2 2004
 
HITACHI, LTD. (1)
* 6198119 Ferroelectric element and method of producing the same 49 1997
 
QIMONDA AG (1)
* 6734057 Method of patterning capacitors and capacitors made thereby 1 2002
 
ROUND ROCK RESEARCH, LLC (1)
* 8593784 Thin film structure that may be used with an adhesion layer 0 2007
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
The United States of America as represented by the United States Department of Energy (1)
* 6146907 Method of forming a dielectric thin film having low loss composition of Ba.sub.x Sr.sub.y Ca.sub.1-x-y TiO.sub.3 : Ba.sub.0.12-0.25 Sr.sub.0.35-0.47 Ca.sub.0.32-0.53 TiO.sub.3 23 1999
 
TEXAS INSTRUMENTS INCORPORATED (1)
* 2005/0199,924 Optimized ferroelectric material crystallographic texture for enhanced high density feram 2 2004
 
KABUSHIKI KAISHA TOSHIBA (3)
* 6015990 Semiconductor memory device and method of manufacturing the same 59 1998
6747529 Piezoelectric thin film resonator and frequency variable resonator using the resonator 14 2002
* 2005/0070,043 Semiconductor device and method for manufacturing the same 5 2003
 
WINBOND ELECTRONICS CORP. (1)
* 2003/0075,753 Stacked capacitor and method for fabricating the same 15 2002
 
RAYTHEON COMPANY (1)
* 8053251 Temperature-compensated ferroelectric capacitor device, and its fabrication 0 2005
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
6291292 Method for fabricating a semiconductor memory device 8 1999
 
VISHAY-SILICONIX (2)
9136060 Precision high-frequency capacitor formed on semiconductor substrate 0 2007
* 2008/0108,202 PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 0 2007
 
BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA (1)
6372306 Ferroelectric materials with chemical formula A(1-x)BxC(1-y)DyF3, and fabrication thereof 1 2000
* Cited By Examiner