Thin film capacitor

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United States of America Patent

PATENT NO 5889299
SERIAL NO

08804394

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Abstract

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A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant 'c' in the direction thicknesswise of the film and a lattice constant 'a' in the direction parallel with a plane of the film.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058001 ?1058001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Kazuhide Kawasaki, JP 95 1336
Fukushima, Noburu Tokyo, JP 20 402
Izuha, Mitsuaki Chiba, JP 8 94
Kawakubo, Takashi Yokohama, JP 82 1589
Komatsu, Shuichi Yokohama, JP 20 391
Sano, Kenya Kawasaki, JP 35 491

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