Packaging for electronic power devices and applications using the packaging
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United States of America Patent
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Apr 6, 1999
Grant Date -
N/A
app pub date -
Dec 11, 1995
filing date -
Dec 11, 1995
priority date (Note) -
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Abstract
A packaging for high-power devices such as Insulated Gate Bipolar Transistors includes a direct bonded copper substrate (DBC), such as beryllium oxide (BeO), soldered directly to a heat generating surface of the high-power device. The direct bonded copper substrate (DBC) is, in turn, soldered directly to a liquid cooled heatsink (HS). The packaging improves the thermal management of the heat generated by the high-power device, and is applicable for use in a switching circuit for a 3-phase electric traction motor (M). The assembly also provides for improved wirebonding design in order to use each high-power device to its fullest.
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