Gate oxide voltage limiting devices for digital circuits
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United States of America Patent
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Apr 6, 1999
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N/A
app pub date -
Feb 12, 1996
filing date -
Feb 12, 1996
priority date (Note) -
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Abstract
An oxide protection circuit prevents failure of the MOS transistors in a digital device. A voltage difference at a gate oxide of a digital device does not exceed a breakdown voltage magnitude. The gate oxide protection circuit includes a plurality of transistors which turn OFF or ON when a node reaches a predetermined voltage of V.sub.refp +V.sub.t or V.sub.refn -V.sub.t, where V.sub.refp and V.sub.refn are reference applied at a gate of a PMOS or an NMOS transistor, and V.sub.t equals a threshold voltage of the MOS transistor.
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