Method for fabricating low cost integrated resistor capacitor combinations
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United States of America Patent
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Apr 13, 1999
Grant Date -
N/A
app pub date -
May 23, 1997
filing date -
May 23, 1997
priority date (Note) -
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Abstract
A low cost method for forming an integrated resistor capacitor combination using only three masks and three mask exposure steps is described. A layer of resistor material is formed on a substrate and patterned forming a resistor and a first capacitor plate. A photoresist mask is then formed covering the resistor and a contact region of the first capacitor plate. The substrate is then immersed in an anodization solution and that part of the first capacitor plate not covered by the photoresist mask is anodized forming a capacitor dielectric. The photoresist mask is then stripped. A layer of conductor material is then formed and patterned to form contacts to the resistor, a contact to the first capacitor plate, and a second capacitor plate.
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