Nonvolatile semiconductor memory having memory cells each storing multi-bits information
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United States of America Patent
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Apr 13, 1999
Grant Date -
N/A
app pub date -
Oct 29, 1997
filing date -
Oct 29, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A variation in threshold of a memory cell is detected at a higher speed. A multi-valued nonvolatile semiconductor memory has a nonvolatile memory cell 41 for storing n-values (n.gtoreq.3) of data as thresholds in one cell, a reference signal generator 44 for emitting a reference signal group Vri (i.ltoreq.(n-1)), a reference signal group VriH(=Vri+.DELTA.V) and a reference signal group VriL(=Vri-.DELTA.V), a differential amplifier 43 for receiving either one of signals Vci (Vci
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