Semiconductor device and method for its preparation
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United States of America Patent
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Apr 20, 1999
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app pub date -
Jun 3, 1997
filing date -
Jun 25, 1993
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Abstract
A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
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