Optimized process for creating and passivating a metal pillar via structure located between two metal interconnect structures
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United States of America Patent
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Apr 20, 1999
Issued Date -
N/A
app pub date -
May 15, 1997
filing date -
Jun 13, 1996
priority date (Note) -
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Abstract
A metal pillar via structure, formed in a composite dielectric layer, contacting an underlying first level metallization structure, and contacting an overlying second level metallization structure, has been developed. The sides of the metal pillar via structure are first encapsulated with insulator sidewall spacers, and than by a composite dielectric layer, with the top surface of the metal pillar via structure, planar with the top surface of the composite dielectric layer. The metal pillar via structure is comprised of a refractory metal such as tungsten.
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