Method of forming a non-volatile memory device with ramped tunnel dielectric layer
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United States of America Patent
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Apr 27, 1999
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app pub date -
Dec 17, 1996
filing date -
Dec 17, 1996
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Abstract
The invention relates to a method of forming a non-volatile memory device with a ramped tunnel dielectric layer, in which a floating gate material layer is being oxidized such that a tunnel dielectric layer is formed having a thickness at a drain region edge which is greater than a thickness at a source region edge.
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