Integrated dual frequency noise attenuator
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United States of America Patent
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-
Apr 27, 1999
Grant Date -
N/A
app pub date -
May 9, 1997
filing date -
May 9, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An integral dual frequency by-pass device is of one or more ceramic dielectric layers, the opposed surfaces of which are formed with electrodes of generally U-shaped configuration. The base portions of the electrodes are exposed at opposite surfaces of the monolith, the leg portions of the U-shaped electrodes extending toward the base portions of electrodes of opposite polarity. The overlap or registration area of one pair of legs differs from the overlap area of the other leg pair with the result that two capacitors of different values are formed, the capacitors being in parallel and accordingly defining low impedance path at two discrete frequencies. By varying the conductive paths as a function of the length of the electrode and/or the base of the U, a desired internal inductance is be developed.
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