Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation
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United States of America Patent
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May 4, 1999
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Oct 11, 1996
filing date -
Oct 11, 1996
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Abstract
A method for enhancing hydrogenation of an oxide-coated polycrystalline silicon thin-film transistor or devices includes depositing a metal capping layer on the device prior to hydrogenation. In addition, a method for batch hydrogenation of substrates or plates carrying the oxide-coated polycrystalline silicon devices includes placing the plates in a downstream flow from a hydrogen plasma.
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