Method for forming a planarized dielectric layer
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United States of America Patent
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May 4, 1999
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N/A
app pub date -
Dec 29, 1997
filing date -
Oct 18, 1997
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Abstract
A method for forming a planarized dielectric layer comprising the steps of first dissolving hydrogen silsesquoxane (HSQ) in a solvent to form a solution, then spreading the solution over a silicon substrate. Next, the solvent is allowed to evaporate, and then heated-treated using a temperature of between 150.degree. C. to 400.degree. C. to form a silica-coated dielectric layer. Finally, a fluoride implant treatment (FIT) is performed to create a dielectric layer having a better thermal stability, more stable dielectric constant and a lower leakage current.
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