Semiconductor device and method of testing the same
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United States of America Patent
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May 4, 1999
Grant Date -
N/A
app pub date -
Nov 21, 1997
filing date -
Nov 21, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device is tested without destroying a substrate immediately after a formation of a metal film and before patterning the metal film. To this end, the substrate is first divided into a product region and a test pattern region. Next, an insulating film is formed on the substrate. Thereafter, openings are formed in the insulating film and on the product region and the test pattern region. Subsequently, the metal film is formed in the openings and on the insulating film. Finally, the metal film is patterned to form a wiring pattern. Under these circumstances, a forming state of the metal film in the opening on the test pattern region is actually tested. Specifically, the presence or absence of a void is checked. In accordance with this test result, a forming state of the metal film in the opening in the product region is evaluated.
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