Plasma processing apparatus
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United States of America Patent
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May 11, 1999
Issued Date -
N/A
app pub date -
Jun 3, 1997
filing date -
Apr 18, 1994
priority date (Note) -
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Abstract
A plasma processing apparatus has a second electrode set parallel to a first electrode to be set in a deposition chamber capable of being set in an airtight vacuum, and an RF power supply path for applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the second electrode. In the plasma processing apparatus, a high-voltage capacitor having a small capacitance is arranged on the RF power supply path. With this arrangement, the plasma processing apparatus capable of uniformly, stably processing a relative large base with a plasma at a high processing speed is provided. Further, the plasma processing apparatus in which the manufacturing time can be shortened and cost can be decreased is provided.
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