Method of plasma enhanced silicon oxide deposition
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United States of America Patent
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May 18, 1999
Issued Date -
N/A
app pub date -
Aug 1, 1997
filing date -
Jul 15, 1987
priority date (Note) -
Expired
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Abstract
A method of depositing a hard silicon oxide based film is provided by controllably flowing a gas stream including an organosilicon compound into a plasma. The organosilicon compound is preferably combined with oxygen and helium and at least a portion of the plasma is preferably magnetically confined adjacent to a substrate during the depositing, most preferably by an unbalanced magnetron. These silicon oxide based films may be reproducibly deposited on small or large substrates with preselected properties.
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