Dielectric thin film capacitor element

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United States of America Patent

PATENT NO 5907470
SERIAL NO

08870629

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Abstract

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The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SHARP KABUSHIKI KAISHAOSAKA14910

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kita, Ryusuke Matsudo, JP 14 293
Masuda, Yoshiyuki Noda, JP 15 338
Matsu, Yoshiyuki Kashiwa, JP 2 32
Ohtani, Noboru Tokyo, JP 32 527
Yano, Seiki Kashiwa, JP 34 322

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