Dielectric thin film capacitor element

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5907470
SERIAL NO

08870629

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
SHARP KABUSHIKI KAISHAOSAKA14972

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kita, Ryusuke Matsudo, JP 14 278
Masuda, Yoshiyuki Noda, JP 14 315
Matsu, Yoshiyuki Kashiwa, JP 2 32
Ohtani, Noboru Tokyo, JP 31 499
Yano, Seiki Kashiwa, JP 34 316

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (2)
* 5578845 Dielectric thin film device with lead erbium zirconate titanate 15 1994
* 5548475 Dielectric thin film device 27 1994
 
TEXAS INSTRUMENTS INCORPORATED (3)
* 5471364 Electrode interface for high-dielectric-constant materials 99 1993
* 5453908 Barium strontium titanate (BST) thin films by holmium donor doping 21 1994
* 5635741 Barium strontium titanate (BST) thin films by erbium donor doping 24 1994
 
MURATA MANUFACTURING CO., LTD. (1)
* 5734545 Monolithic ceramic capacitor 16 1996
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6815744 Microelectronic device for storing information with switchable ohmic resistance 101 2001
 
Other [Check patent profile for assignment information] (1)
* 2004/0077,168 Etchant and method for fabricating a semiconductor device using the same 0 2003
 
U.S. BANK NATIONAL ASSOCIATION (2)
* 2003/0219,941 Dielectric cure for reducing oxygen vacancies 1 2003
* 2003/0209,748 Dielectric cure for reducing oxygen vacancies 1 2003
 
SONY CORPORATION (1)
* 6544857 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method 6 1999
 
UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (1)
* 9013002 Iridium interfacial stack (IRIS) 0 2012
 
MICRON TECHNOLOGY, INC. (4)
* 6281142 Dielectric cure for reducing oxygen vacancies 88 1999
6589839 Dielectric cure for reducing oxygen vacancies 14 2000
6878602 Dielectric cure for reducing oxygen vacancies 9 2003
6849494 Dielectric cure for reducing oxygen vacancies 1 2003
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 6909592 Thin film capacitor and fabrication method thereof 3 2003
* 2004/0150,940 Thin film capacitor and fabrication method thereof 0 2003
 
BLACKBERRY LIMITED (5)
8562899 Electronically tunable, low-loss ceramic materials including a tunable dielectric phase and multiple metal oxide phases 0 2003
* 2004/0089,985 Electronically tunable, low-loss ceramic materials including a tunable dielectric phase and multiple metal oxide phases 2 2003
* 2005/0116,796 Electronically tunable combline filters tuned by tunable dielectric capacitors 0 2004
* 8609017 Electronically tunable, low-loss ceramic materials including a tunable dielectric phase and multiple metal oxide phases 0 2007
* 2007/0145,647 Electronically tunable, low-loss ceramic materials including a tunable dielectric phase and multiple metal oxide phases 1 2007
 
GLOBALFOUNDRIES INC. (3)
* 2005/0260,839 Non-volatile resistance switching memory 10 2005
* 2009/0308,313 NON-VOLATILE RESISTANCE SWITCHING MEMORY 2 2009
* 2009/0305,487 NON-VOLATILE RESISTANCE SWITCHING MEMORY 0 2009
 
JX NIPPON MINING & METALS CORPORATION (1)
* 6245203 BaxSr1-xTiO3-y target materials for sputtering 0 1998
 
WASEDA UNIVERSITY (2)
* 7196898 Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor 10 2004
* 7836567 Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor 2 2006
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
LONGITUDE SEMICONDUCTOR S.A.R.L. (2)
* 6150684 Thin-film capacitor and method of producing same 15 1999
6323057 Method of producing a thin-film capacitor 28 2000
 
SHOWA DENKO K.K. (1)
* 7598593 N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode 0 2004
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
* 6103567 Method of fabricating dielectric layer 21 1999
* Cited By Examiner