Cleaning and stripping of photoresist from surfaces of semiconductor wafers
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United States of America Patent
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Jun 1, 1999
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N/A
app pub date -
Apr 24, 1996
filing date -
Apr 24, 1996
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Abstract
In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.
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